Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier

被引:0
|
作者
Rodriguez, Melissa C. [1 ]
Tarazi, Jabra [1 ]
Dadello, Anna [1 ]
Convert, Emmanuelle R. O. [1 ]
McCulloch, MacCrae G. [1 ]
Mahon, Simon J. [1 ]
Hwang, Steve [1 ]
Mould, Rodney G. [1 ]
Fattorini, Anthony P. [1 ]
Young, Alan C. [1 ]
Harvey, James T. [1 ]
Parker, Anthony E. [2 ]
Heimlich, Michael C. [2 ]
Wang, Wen-Kai [3 ]
机构
[1] Macom Tech Solut, Sydney Design Ctr, 157 Walker St, Sydney, NSW 2060, Australia
[2] Macquarie Univ, Dept Engn, N Ryde, NSW 2109, Australia
[3] WIN Semicond, Tao Yuan Shien, Taiwan
基金
澳大利亚研究理事会;
关键词
E-band; frequency conversion; gallium arsenide; HEMTs; millimetre wave integrated circuits; power amplifiers; MW;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.
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页数:4
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