E-band Transformer-based Doherty Power Amplifier in 40 nm CMOS

被引：0

作者：

Kaymaksut, Ercan ^{[1
]}

Zhao, Dixian ^{[1
]}

Reynaert, Patrick ^{[1
]}

机构：

[1] KU Leuven ESAT MICAS, B-3001 Heverlee, Belgium

来源：

2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2014年

关键词：

mm-wave; series combining transformer;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an 80 GHz Doherty power amplifier in 40 nm CMOS technology. The amplifier combines 4 push-pull amplifiers by using 2x2 parallel-series combiner. In addition, it employs additional LC impedance matching to enhance the back-off efficiency. The transformer-based Doherty amplifier demonstrates both high linearity and high back-off efficiency. Thus, it is tailored for high PAPR mm-wave applications such as E-band communication. The two stage Doherty power amplifier achieves 16.2 dBm output power at 0.9 V supply with a PAE of 12%. Thanks to the linearization feature of the Doherty topology the 1 dB compression point of the amplifier is as high as 15.2 dBm while the PAE at P-1dB is 11.1%.

引用

页码：167 / 170

页数：4

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