Ion beam-induced interfacial growth in Si and silicides (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 206-215, 1995)

被引：0
|
作者：
Fortuna, F [1 ]
Nedellec, P [1 ]
Ruault, MO [1 ]
Bernas, H [1 ]
Lin, XW [1 ]
Boucaud, P [1 ]
机构：
[1] CNRS,CTR SPECTROMETRIE NUCL & SPECTROMETRIE MASSE,IN2P3,F-91405 ORSAY,FRANCE
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：206 / 215
页数：10
相关论文
共 50 条
  • [41] Secondary defect formation in self-ion irradiated silicon (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 216-221, 1995)
    Goldberg, RD
    Simpson, TW
    Mitchell, IV
    Simpson, PJ
    Prikryl, M
    Weatherly, GC
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 216 - 221
  • [42] Metastable alloys synthesised by ion mixing and thermodynamic and kinetic modelling (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 17-22, 1995)
    Liu, BX
    Zhang, ZJ
    Jin, O
    Pan, F
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 17 - 22
  • [43] Characterization of cubic boron nitride films grown by mass separated ion beam deposition (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 153-158, 1995)
    Hofsass, H
    Ronning, C
    Griesmeier, U
    Gross, M
    Reinke, S
    Kuhr, M
    Zweck, J
    Fischer, R
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 153 - 158
  • [44] Ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 289-293, 1995)
    Kobayashi, N
    Hasegawa, M
    Hayashi, N
    Tanoue, H
    Shibata, H
    Makita, Y
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 289 - 293
  • [45] Atomic mixing induced in metallic bilayers by high electronic excitations (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 28-33, 1995)
    Leguay, R
    Dunlop, A
    Dunstetter, F
    Lorenzelli, N
    Braslau, A
    Bridou, F
    Corno, J
    Pardo, B
    Chevallier, J
    Colliex, C
    Menelle, A
    Rouviere, JL
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 28 - 33
  • [46] Transient enhanced diffusion of dopant in preamorphised Si: The role of EOR defects (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 222-226, 1995)
    Bonafos, C
    Martinez, A
    Faye, MM
    Bergaud, C
    Mathiot, D
    Claverie, A
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 222 - 226
  • [47] Elevated temperature Ge implantation into Si and the effect of subsequent thermal annealing (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 271-276, 1995)
    Wong, WC
    Elliman, RG
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 271 - 276
  • [48] MEVVA ion-implantation of high T-c superconductors (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 624-629, 1995)
    Martin, JW
    Cohen, DD
    Russell, GJ
    Dytlewski, N
    Evans, PJ
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 624 - 629
  • [49] In situ ion-beam analysis and modification of sol-gel zirconia thin films (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 597-601, 1995)
    Levine, TE
    Yu, N
    Kodali, P
    Walter, KC
    Nastasi, M
    Tesmer, JR
    Maggiore, CJ
    Mayer, JW
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 597 - 601
  • [50] Valence band electronic redistribution in ion-beam-mixed Pd-Ag alloys (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 60-64, 1995)
    Chae, KH
    Lee, YS
    Jung, SM
    Jeon, Y
    Croft, M
    Whang, CN
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 60 - 64
12345