Ion beam-induced interfacial growth in Si and silicides (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 206-215, 1995)

被引：0
|
作者：
Fortuna, F [1 ]
Nedellec, P [1 ]
Ruault, MO [1 ]
Bernas, H [1 ]
Lin, XW [1 ]
Boucaud, P [1 ]
机构：
[1] CNRS,CTR SPECTROMETRIE NUCL & SPECTROMETRIE MASSE,IN2P3,F-91405 ORSAY,FRANCE
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：206 / 215
页数：10
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