Spin Pumping in Permalloy/Graphene and Permalloy/Graphite Interfaces

被引:10
|
作者
Singh, Simranjeet [1 ]
Patra, Ajit Kumar [2 ]
Barin, Brett [1 ]
del Barco, Enrique [1 ]
Oezyilmaz, Barbaros [2 ,3 ,4 ,5 ]
机构
[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[3] Natl Univ Singapore, NanoCore, Singapore 117576, Singapore
[4] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore
[5] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn NGS, Singapore 117456, Singapore
基金
新加坡国家研究基金会; 美国国家科学基金会;
关键词
Magnetoelectronics; spin polarized transport; ROOM-TEMPERATURE; GRAPHENE FILMS; TRANSPORT; VALVE;
D O I
10.1109/TMAG.2013.2244067
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article reports a comparative study of the spin pumping induced by graphite and graphene layers adjacent to an extended ferromagnetic Permalloy film. The corresponding enhancement of the Gilbert damping in the ferromagnet is determined by analyzing the frequency dependence of the ferromagnetic resonance linewidth in experiments done with a broad band microwave spectrometer. The results show that a single graphene layer is more efficient than a thick graphite film in absorbing the angular momentum pumped away from the Permalloy during the resonant precession of its magnetization. We associate this effect to an enhancement of the spin-orbit coupling in the graphene layer due to Copper adatoms residual from the chemical vapor deposition process used to synthesize the graphene used in the experiments.
引用
收藏
页码:3147 / 3150
页数:4
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