Spin Pumping and Temperature-Resolved Ferromagnetic Resonance in Permalloy-Topological Insulator Nanostructured Bilayers

被引:3
|
作者
Davydova, M. D. [1 ]
Pakhomov, A. S. [1 ]
Kuz'michev, A. N. [1 ,5 ]
Vetoshko, P. M. [1 ,5 ]
Skirdkov, P. N. [1 ,5 ]
Han, H. C. [2 ]
Chen, Y. S. [4 ]
Lin, J. G. [4 ]
Wu, J. C. [2 ]
Huang, J. C. A. [2 ,3 ]
Zvezdin, K. A. [1 ,5 ,6 ]
机构
[1] Moscow Inst Phys & Technol, Dolgoprudnyi 141701, Russia
[2] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan
[3] Natl Cheng Kung Univ, Tainan 701, Taiwan
[4] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
[5] Russian Quantum Ctr, Skolkovo 143025, Moscow Region, Russia
[6] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia
关键词
Spin pumping; ferromagnetic resonance; spin-orbitronics; SPINTRONICS;
D O I
10.1007/s11664-018-6765-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The huge spin-orbit coupling inherent to 3D topological insulators makes bilayers of the topological insulator-ferromagnetic metal type very attractive for topological spintronics. We study spin pumping due to ferromagnetic resonance in permalloy ferromagnet-topological insulator bismuth selenide (Bi2Se3) bilayers. We study cases of both uniform and nanostructured bilayers, where the permalloy layer is in the form of an array of nanocylinders with industry-relevant geometries. We measure the dc voltage signal caused by conversion of the spin current into the charge current in the bulk of topological insulator due to the inverse spin Hall effect. Our results show that the pumped signal for uniform and nanostructured bilayers is comparable, which is important for prospective applications in information and communication technologies. We report the temperature dependencies of a resonance magnetic field for the uniform sample. To obtain theoretical insight into the experimental results, we use a method which involves micromagnetic modeling for estimation of effective constants and dc voltages in experiments with similar nanostructured bilayers.
引用
收藏
页码:1375 / 1379
页数:5
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