Effect of Doping Profile on Tunneling Field Effect Transistor Performance

被引：0
|
作者：
Vijayvargiya, Vikas [1 ]
Vishvakarma, Santosh [1 ]
机构：
[1] Indian Inst Technol, Elect Engn, Indore, India
来源：
PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) | 2013年
关键词：
tunneling field effect transistor; subthreshold slope; gaussian profile; uniform doping; FET;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tunneling field effect transistor (TFETs) has recently attracted considerable interest because of their potential use in low power logic application. In this paper, we have investigated the effect of uniform doping versus varying doping (Gaussian) profile on TFET performance. We have shown that off-state current and subthreshold slope (SS) in the TFET can be improved by using low doping profile at channel-drain junction. It provides an improved I-ON/I-OFF and subthreshold slope of 10(10) and 47 mV/dec respectively. Also by placing small high density layer in the channel near source-channel junction improve the SS to 43 mV/dec and Ion current by a few order. Finally, it is shown that ambipolar behavior is also reduced.
引用
收藏
页码：195 / 197
页数：3
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