Schottky diodes based on electrodeposited ZnO nanorod arrays for humidity sensing at room temperature

被引：21

作者：

Herran, J. ^{[1
]}

Fernandez, I. ^{[1
]}

Tena-Zaera, R. ^{[1
]}

Ochoteco, E. ^{[1
]}

Cabanero, G. ^{[1
]}

Grande, H. ^{[1
]}

机构：

[1] Cidetec IK4, Sensors & Photon Unit, New Mat Dept, E-20009 San Sebastian, Spain

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2012年 / 174卷

关键词：

Humidity sensor; Room temperature; ZnO nanorods; Schottky diode; Electrodeposition; ZINC-OXIDE; SENSOR; NANOWIRE; CONDUCTIVITY; SENSITIVITY; LAYER; FILM;

D O I：

10.1016/j.snb.2012.08.009

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A room temperature Ag/ZnO Schottky diode for relative humidity monitoring is presented. Electrodeposited ZnO nanorod arrays are used as sensing material. The response time is around 5 s and the sensitivity shows a logarithmic relation between 20% and 75% of RH. The electrical changes are observed to be related to the physical behavior of the Schottky diode according to the metal-semiconductor junction formed between the ZnO and the Ag. The sensing process is based on the adsorption of the water molecules on the nanorod surface and the reduction of the majority of carriers in the conduction band of the semiconductor, according to the relation associated to the work-function of Schottky barrier. A comparison on real time between the sensor developed and a commercial device corroborates the potential application of the new sensor presented in this work. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：274 / 278

页数：5

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