Deep energy levels in RuO2/4H-SiC Schottky barrier structures

被引：13

作者：

Stuchlikova, L

Buc, D

Harmatha, L

Helmersson, U

Chang, WH

Bello, I

机构：

[1] Slovak Univ Technol Bratislava, Dept Microelect, Bratislava 81219, Slovakia

[2] Linkoping Univ, Dept Phys, Thin Film Phys Div, S-58183 Linkoping, Sweden

[3] Univ Western Ontario, London, ON N6A 5B7, Canada

[4] Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

关键词：

D O I：

10.1063/1.2195775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

RuO2/4H-SiC Schottky diode structures based on n-type 4H-SiC (7x10(17) cm(-3)) with stoichiometric RuO2 Schottky contacts were characterized by electrical capacitance-voltage and current voltage methods and deep-level transient spectroscopy in order to determine their unique semiconducting and electronic properties. The RuO2 films exhibited electrical conductivity of 60 mu Omega cm for Schottky barrier heights of approximately 0.88 eV. These Schottky structures revealed two deep energy levels with thermal activation energies of 0.56 and 0.85 eV with reference to the conduction band. (c) 2006 American Institute of Physics.

引用

页数：3

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