[Fe80Ni20-O/SiO2]n Multilayer thin films for applications in GHz range

被引：21

作者：

Geng, H. ^{[1
]}

Wei, J. Q. ^{[1
]}

Nie, S. J. ^{[1
]}

Wang, Y. ^{[1
]}

Wang, Z. W. ^{[1
]}

Wang, L. S. ^{[1
]}

Chen, Y. ^{[1
]}

Peng, D. L. ^{[1
]}

Li, F. S. ^{[2
]}

Xue, D. S. ^{[2
]}

机构：

[1] Xiamen Univ, Dept Mat Sci & Engn, Coll Mat, Xiamen 361005, Peoples R China

[2] Lanzhou Univ, MOE, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China

来源：

MATERIALS LETTERS | 2013年 / 92卷

基金：

中国国家自然科学基金;

关键词：

Multilayer structure; Magnetic materials; Magnetic anisotropy; High-frequency characteristics; Sputtering; SOFT-MAGNETIC PROPERTIES; FREQUENCY PERMEABILITY;

D O I：

10.1016/j.matlet.2012.11.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film materials with excellent high-frequency, magnetic and electrical properties are in great demand in modern electromagnetic devices operating in GHz range. In this letter, we fabricated [Fe80Ni20-O/SiO2](n) multilayer thin films with different SiO2 interlayer thicknesses (t=0.5-4 nm) and fixed Fe80Ni20-O layer thickness by controlling the sputtering time at room temperature. In these films, the in-plane uniaxial magnetic anisotropy fields can be adjusted in a broad range (from 26 to 107 Oe) by just changing the thickness of each SiO2 interlayer without applying any inducing field. Excellent high-frequency performances in GHz range have been observed in the typical sample. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：346 / 349

页数：4

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