[Fe80Ni20-O/SiO2]n Multilayer thin films for applications in GHz range

被引：21
|
作者：
Geng, H. [1 ]
Wei, J. Q. [1 ]
Nie, S. J. [1 ]
Wang, Y. [1 ]
Wang, Z. W. [1 ]
Wang, L. S. [1 ]
Chen, Y. [1 ]
Peng, D. L. [1 ]
Li, F. S. [2 ]
Xue, D. S. [2 ]
机构：
[1] Xiamen Univ, Dept Mat Sci & Engn, Coll Mat, Xiamen 361005, Peoples R China
[2] Lanzhou Univ, MOE, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China
来源：
MATERIALS LETTERS | 2013年 / 92卷
基金：
中国国家自然科学基金;
关键词：
Multilayer structure; Magnetic materials; Magnetic anisotropy; High-frequency characteristics; Sputtering; SOFT-MAGNETIC PROPERTIES; FREQUENCY PERMEABILITY;
D O I：
10.1016/j.matlet.2012.11.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin film materials with excellent high-frequency, magnetic and electrical properties are in great demand in modern electromagnetic devices operating in GHz range. In this letter, we fabricated [Fe80Ni20-O/SiO2](n) multilayer thin films with different SiO2 interlayer thicknesses (t=0.5-4 nm) and fixed Fe80Ni20-O layer thickness by controlling the sputtering time at room temperature. In these films, the in-plane uniaxial magnetic anisotropy fields can be adjusted in a broad range (from 26 to 107 Oe) by just changing the thickness of each SiO2 interlayer without applying any inducing field. Excellent high-frequency performances in GHz range have been observed in the typical sample. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：346 / 349
页数：4
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