Piezoresistivity Characterization of Silicon Nanowires Through Monolithic MEMS

被引:0
|
作者
Esfahani, Mohammad Nasr [1 ]
Leblebici, Yusuf [2 ]
Alaca, B. Erdem [3 ]
机构
[1] Koc Univ, Dept Mech Engn, Istanbul, Turkey
[2] Ecole Polytech Fed Lausanne, Microelect Syst Lab, Lausanne, Switzerland
[3] Koc Univ, Surface Sci & Technol Ctr, Dept Mech Engn, Istanbul, Turkey
来源
2017 IEEE 12TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2017年
关键词
Silicon Nanowire; Piezoresistivity; Monolithic Integration; Gauge Factor; GIANT PIEZORESISTANCE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a monolithic approach for the integration of silicon nanowires (Si NWs) with microelectromechanical systems (MEMS). The process is demonstrated for the case of co-fabrication of Si NWs with a 10-mu m-thick MEMS on the same silicon-on-insulator (SOI) wafer. MEMS is designed in the form of a characterization platform with an electrostatic actuator and a mechanical amplifier spanned by a single Si NW. This integrated platform is utilized for the successful measurement of Si NW piezoresistive gauge factor (GF) under a uniform uniaxial stress. Available techniques in this field include: i) Indirect (substrate) or direct (actuator) bending of Si NW necessitating rigorous models for the conversion of load to stress, ii) nanomanipulation and attachment of Si NW on MEMS, a non-monolithic technique posing residual stress and alignment issues, and iii) heterogeneous integration with separate Si layers for Si NW and MEMS, where a single SOI is not sufficient for the end product. Providing a monolithic solution to the integration of micro and nanoscale components, the presented technique successfully addresses the shortcomings of similar studies. In addition to providing a solution for electromechanical characterization, the technique also sets forth a promising pathway for multiscale, functional devices produced in a batch-compatible fashion, as it facilitates co-fabrication within the same Si crystal.
引用
收藏
页码:77 / 80
页数:4
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