Scanning tunneling microscopy study of the c(4 x 4) structure formation in the sub-monolayer Sb/Si(100) system

被引：3

作者：

Saranin, AA

Zotov, AV

Kotlyar, VG

Lifshits, VG

Kubo, O

Harada, T

Kobayashi, T

Yamaoka, N

Katayama, M

Oura, K

机构：

[1] Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

[2] Inst Automat & Control Proc, Vladivostok 690041, Russia

[3] Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia

[4] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690000, Russia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 10期

关键词：

Si(100); Sb; STM; surface structure; c(4 x 4) surface;

D O I：

10.1143/JJAP.40.6069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Upon Sb desorption from a Sb-saturated Si(100) surface, the c(4 x 4) structure formed at about 0.25 monolayer Sb coverage. The c(4 x 4) reconstruction has been found to develop best when the surface is slightly contaminated, plausibly, by carbon. The Si(100)-c(4 x 4)-Sb surface shows up in the high-resolution filled state scanning tunneling microscopy images as being very similar to that of the recently reported e(4 x 4)-Si reconstruction. Here the main features of the Si(100)-c(4 x 4)-Sb structure are identified and the possible atomic arrangement is discussed.

引用

页码：6069 / 6072

页数：4

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