Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy

被引：2

作者：

Li, Yang ^{[1
,2
,3
]}

Song, Yuxin ^{[3
]}

Zhang, Zhenpu ^{[3
,4
]}

Li, Yaoyao ^{[3
]}

Chen, Qimiao ^{[3
,5
]}

Zha, Fangxing ^{[1
,2
]}

Wang, Shumin ^{[3
,6
]}

机构：

[1] Shanghai Univ, Phys Dept, Shanghai 200444, Peoples R China

[2] Shanghai Univ, Lab Microstruct, Shanghai 200444, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[4] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[5] Univ Chinese Acad Sci, Beijing, Peoples R China

[6] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

来源：

MATERIALS RESEARCH EXPRESS | 2017年 / 4卷 / 04期

关键词：

scanning tunneling microscopy; tensile-strained Ge; nanostructure; SPECTROSCOPY;

D O I：

10.1088/2053-1591/aa6bbf

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different coverage rates of Ge nanostructures on GaSb are achieved and investigated. It is found the growth of Ge on GaSb follows 2D growth mode. The crystal lattice of the sub-monolayer Ge nanostructures is coherent with that of the GaSb, inferring as large as 7.74% tensile strain in the Ge nanostructures.

引用

页数：5

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