Scanning tunneling microscopy study of the c(4 x 4) structure formation in the sub-monolayer Sb/Si(100) system

被引：3
|
作者：
Saranin, AA
Zotov, AV
Kotlyar, VG
Lifshits, VG
Kubo, O
Harada, T
Kobayashi, T
Yamaoka, N
Katayama, M
Oura, K
机构：
[1] Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan
[2] Inst Automat & Control Proc, Vladivostok 690041, Russia
[3] Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia
[4] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690000, Russia
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 10期
关键词：
Si(100); Sb; STM; surface structure; c(4 x 4) surface;
D O I：
10.1143/JJAP.40.6069
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Upon Sb desorption from a Sb-saturated Si(100) surface, the c(4 x 4) structure formed at about 0.25 monolayer Sb coverage. The c(4 x 4) reconstruction has been found to develop best when the surface is slightly contaminated, plausibly, by carbon. The Si(100)-c(4 x 4)-Sb surface shows up in the high-resolution filled state scanning tunneling microscopy images as being very similar to that of the recently reported e(4 x 4)-Si reconstruction. Here the main features of the Si(100)-c(4 x 4)-Sb structure are identified and the possible atomic arrangement is discussed.
引用
收藏
页码：6069 / 6072
页数：4
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