Demonstration of high saturation power/high gain SOAs using quantum well intermixing based integration platform

被引：9
|
作者：
Raring, JW [1 ]
Skogen, EJ
Masanovic, ML
DenBaars, SP
Coldren, LA
机构：
[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Elect & Comp Engn Dept, Santa Barbara, CA 93106 USA
[3] Sandia Natl Labs, Albuquerque, NM USA
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 24期
关键词：
D O I：
10.1049/el:20053248
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance of semiconductor optical amplifiers (SOAs) employing regions of high and low optical confinement designed for high saturation power and high gain using a novel quantum well intermixing and MOCVD regrowth fabrication scheme is reported. The scheme enables the monolithic integration of high performance SOAs with high gain laser diodes, high efficiency electroabsorption modulators, and high saturation power photodiodes. The SOAs presented exhibit saturation powers in the 19 to 20 dBm range with nearly 15 dB of gain.
引用
收藏
页码：1345 / 1346
页数：2
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