High Efficiency, High Gain and High Saturation Output Power Quantum Dot SOAs Grown on Si and applications

被引：0
|
作者：
Liu, Songtao [1 ,2 ]
Tong, Yeyu [1 ,3 ]
Norman, Justin [4 ]
Dumont, Mario [4 ]
Gossard, Arthur [1 ,2 ,4 ]
Tsang, Hon K. [3 ]
Bowers, John [1 ,2 ,4 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA
[3] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
[4] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
来源：
2020 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC) | 2020年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance quantum dot semiconductor optical amplifier directly grown on a CMOS compatible Si substrate is demonstrated to improve the receiver sensitivity in a filterless 60-Gbit/s NRZ transmission system over temperatures from 20 degrees C to 60 degrees C.
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页数：3
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