Grain-boundaries in β-SiC:: A joined HRTEM and numerical atomic study

被引：8
|
作者：
Godon, C
Ragaru, C
Duparc, OH
Lancin, M
机构：
[1] Inst Mat Nantes, Lab Phys Cristalline, CMC, F-44322 Nantes, France
[2] Ecole Polytech, CEREM, Solides Irradies Lab, CEA,CNRS,UMR 7642, F-91128 Palaiseau, France
来源：
INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98 | 1999年 / 294-2卷
关键词：
grain boundary; beta-SiC; HRTEM; atomistic simulation;
D O I：
10.4028/www.scientific.net/MSF.294-296.277
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The beta-grains which develop during recrystallisation contain many small {112} Sigma=3 boundaries. Their structure is characterised by HRTEM performed at 300 kV and image contrast is simulated in order to determine the atomic reconstruction. We perform atomistic calculations (molecular dynamics) with the angular N-body Tersoff potential adapted to SiC in order to compare these reconstructions with our HRTEM observations.
引用
收藏
页码：277 / 280
页数：4
相关论文
共 50 条
  • [41] ATOMIC-STRUCTURE OF (111) TWIST GRAIN-BOUNDARIES IN FCC METALS
    DEHOSSON, JTM
    VITEK, V
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1990, 61 (02): : 305 - 327
  • [42] SIMULATION OF ATOMIC ARRANGEMENTS IN AMORPHOUS SOLIDS AND IN GRAIN-BOUNDARIES WITH MAGNETIC BUBBLES
    CHAUDHAR.P
    WOOLHOUS.GR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 422 - 422
  • [43] ATOMIC-STRUCTURE AND ENERGY OF GRAIN-BOUNDARIES IN SILICON, GERMANIUM AND DIAMOND
    NARAYAN, J
    NANDEDKAR, AS
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (05): : 1181 - 1192
  • [44] FIELD-ION MICROSCOPIC ANALYSIS OF ATOMIC STRUCTURE OF GRAIN-BOUNDARIES
    POTAPOV, LP
    GOLOVIN, BF
    SHIRYAEV, PP
    PHYSICS OF METALS AND METALLOGRAPHY, 1971, 32 (05): : 227 - 230
  • [45] Characterization of grain boundaries of Al-doped sintered β-SiC by both HRTEM and STEM
    Kaneko, K
    Saitoh, T
    Tsurekawa, S
    INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98, 1999, 294-2 : 269 - 272
  • [46] DEFECT STRUCTURES IN GRAIN-BOUNDARIES
    HIRTH, JP
    ACTA METALLURGICA, 1974, 22 (08): : 1023 - 1031
  • [47] GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    SEAGER, CH
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1985, 15 : 271 - 302
  • [48] ENERGY OF GRAIN-BOUNDARIES IN SEMICONDUCTORS
    MOLLER, HJ
    JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 33 - 43
  • [49] TILT GRAIN-BOUNDARIES IN NIO
    MERKLE, KL
    REDDY, JF
    WILEY, CL
    ULTRAMICROSCOPY, 1985, 18 (1-4) : 281 - 284
  • [50] SELECTIVE SEGREGATION AT GRAIN-BOUNDARIES
    AUST, KT
    CANADIAN METALLURGICAL QUARTERLY, 1974, 13 (01) : 133 - 143
12345