Grain-boundaries in β-SiC:: A joined HRTEM and numerical atomic study

被引：8
|
作者：
Godon, C
Ragaru, C
Duparc, OH
Lancin, M
机构：
[1] Inst Mat Nantes, Lab Phys Cristalline, CMC, F-44322 Nantes, France
[2] Ecole Polytech, CEREM, Solides Irradies Lab, CEA,CNRS,UMR 7642, F-91128 Palaiseau, France
来源：
INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98 | 1999年 / 294-2卷
关键词：
grain boundary; beta-SiC; HRTEM; atomistic simulation;
D O I：
10.4028/www.scientific.net/MSF.294-296.277
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The beta-grains which develop during recrystallisation contain many small {112} Sigma=3 boundaries. Their structure is characterised by HRTEM performed at 300 kV and image contrast is simulated in order to determine the atomic reconstruction. We perform atomistic calculations (molecular dynamics) with the angular N-body Tersoff potential adapted to SiC in order to compare these reconstructions with our HRTEM observations.
引用
收藏
页码：277 / 280
页数：4
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