Efficient non-quasi-static MOSFET model for both time-domain and frequency-domain analysis

被引：0
|
作者：
Machida, K [1 ]
Navarro, D
Miyake, M
Inagaki, R
Sadachika, N
Ezaki, T
Mattausch, HJ
Miura-Mattausch, M
机构：
[1] Hiroshima Univ, Grad Sch Adv Sci Matter, 1-3-1 Kagamiyama, Higashihiroshima 7398530, Japan
[2] Semiconduct Technol Acad Res Ctr, Kanagawa 2220033, Japan
来源：
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年
关键词：
non-quasi-static effect; Y-parameter; frequency domain; MOSFET model;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A consistent non-quasi-static MOSFET model for time-domain and frequency-domain circuit simulation is developed. The model takes into account the time delay for carriers to form the channel, which is neglected in conventional quasi-static models. The model, as implemented into the surface-potential-based MOSFET model HiSIM, is verified to calculate correct Y-parameters in the frequency domain. The computational runtime cost of the model is comparable to a conventional quasi-static modeling approach.
引用
收藏
页码：73 / +
页数：2
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