Rapid thermal oxidation of porous silicon for surface passivation

被引：0
|
作者：
Debarge, L [1 ]
Stoquert, JP [1 ]
Slaoui, A [1 ]
Stalmans, L [1 ]
Poortmans, J [1 ]
机构：
[1] CNRS, PHASE, UPR 292, F-67037 Strasbourg, France
来源：
RAPID THERMAL PROCESSING | 1999年 / 84卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Rapid thermal oxidation with dry oxygen has been carried out on porous silicon (PS) films formed by electrochemical etching. The purpose of the paper was to investigate the surface passivation capability of the oxidized PS layers and to understand the oxidation mechanism. Rutherford back scattering (RBS) and X-ray photoemission spectroscopy (XPS) analyses confirmed the formation of a stoichiometric quasi-silicon dioxide. Besides, elastic recoil diffusion analysis (ERDA) demonstrated that a high concentration of hydrogen is still present in the PS film even after oxidation. RTO resulted in a good surface passivation effect at high temperature (>1000 degrees C) as seen by internal quantum efficiency analysis. However, lifetime in bulk silicon is affected by the RTO process. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
下载
收藏
页码：281 / 285
页数：5
相关论文
共 50 条
  • [41] Bulk Model of Rapid Thermal Oxidation of Silicon
    Aleksandrov, O. V.
    Dus, A. I.
    JOURNAL OF SURFACE INVESTIGATION, 2009, 3 (04): : 620 - 626
  • [42] KINETICS OF RAPID THERMAL-OXIDATION OF SILICON
    FUKUDA, H
    YASUDA, M
    IWABUCHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (10): : 3436 - 3439
  • [43] Unusual photoluminescence decay of porous silicon prepared by rapid thermal oxidation and quenching in liquid nitrogen
    Wadayama, T
    Arigane, T
    Hayamizu, K
    Hatta, A
    MATERIALS TRANSACTIONS, 2002, 43 (11) : 2832 - 2837
  • [44] Effect of rapid thermal treatment on optical properties of porous silicon surface doped lithium
    Haddadi, Ikbel
    Ben Slema, Sonia
    Ben Amor, Sana
    Bousbih, Rabaa
    Bardaoui, Afrah
    Dimassi, Wissem
    Ezzaouia, Hatem
    JOURNAL OF LUMINESCENCE, 2015, 160 : 176 - 180
  • [45] High-gain porous silicon metal-semiconductor-metal photodetector through rapid thermal oxidation and rapid thermal annealing
    Lee, M.-K.
    Tseng, Y.-C.
    Chu, C.-H.
    Applied Physics A: Materials Science and Processing, 1998, 67 (05): : 541 - 543
  • [46] A high-gain porous silicon metal-semiconductor-metal photodetector through rapid thermal oxidation and rapid thermal annealing
    Lee, MK
    Tseng, YC
    Chu, CH
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (05): : 541 - 543
  • [47] Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds
    Gelloz, B
    Sano, H
    Boukherroub, R
    Wayner, DDM
    Lockwood, DJ
    Koshida, N
    APPLIED PHYSICS LETTERS, 2003, 83 (12) : 2342 - 2344
  • [48] SURFACE PASSIVATION - A CRITICAL PARAMETER FOR THE VISIBLE LUMINESCENCE OF ELECTROOXIDIZED POROUS SILICON
    MIHALCESCU, I
    LIGEON, M
    MULLER, F
    ROMESTAIN, R
    VIAL, JC
    JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 111 - 115
  • [49] Improved photoluminescence and sensing stability of porous silicon nanowires by surface passivation
    Gan, Lu
    He, Haiping
    Sun, Luwei
    Ye, Zhizhen
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2014, 16 (03) : 890 - 894
  • [50] INVESTIGATION OF RAPID-THERMAL-OXIDIZED POROUS SILICON
    LI, KH
    TSAI, C
    CAMPBELL, JC
    HANCE, BK
    WHITE, JM
    APPLIED PHYSICS LETTERS, 1993, 62 (26) : 3501 - 3503
12345