High-gain porous silicon metal-semiconductor-metal photodetector through rapid thermal oxidation and rapid thermal annealing

被引：0

作者：

Lee, M.-K. ^{[1
]}

Tseng, Y.-C. ^{[1
]}

Chu, C.-H. ^{[1
]}

机构：

[1] Natl Sun Yat-Sen Univ, Kaohsiung, Taiwan

来源：

Applied Physics A: Materials Science and Processing | 1998年 / 67卷 / 05期

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摘要：

引用

页码：541 / 543

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