High-gain porous silicon metal-semiconductor-metal photodetector through rapid thermal oxidation and rapid thermal annealing

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作者：
Lee, M.-K. [1 ]
Tseng, Y.-C. [1 ]
Chu, C.-H. [1 ]
机构：
[1] Natl Sun Yat-Sen Univ, Kaohsiung, Taiwan
来源：
Applied Physics A: Materials Science and Processing | 1998年 / 67卷 / 05期
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页码：541 / 543
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