Effect of a GaAsP Shell on the Optical Properties of Self-Catalyzed GaAs Nanowires Grown on Silicon

被引：26
|
作者：
Couto, O. D. D., Jr. [1 ,4 ]
Sercombe, D. [1 ]
Puebla, J. [1 ]
Otubo, L. [2 ]
Luxmoore, I. J. [1 ]
Sich, M. [1 ]
Elliott, T. J. [1 ]
Chekhovich, E. A. [1 ]
Wilson, L. R. [1 ]
Skolnick, M. S. [1 ]
Liu, H. Y. [3 ]
Tartakovskii, A. I. [1 ]
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Inst Pesquisas Energet & Nucl IPEN, Sao Paulo, Brazil
[3] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
[4] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Sao Paulo, Brazil
来源：
NANO LETTERS | 2012年 / 12卷 / 10期
基金：
英国工程与自然科学研究理事会;
关键词：
Nanowire; GaAs/GaAsP; molecular beam epitaxy (MBE); emission enhancement; strain; room-temperature emission; EPITAXIAL-GROWTH; PASSIVATION; LAYER;
D O I：
10.1021/nl302490y
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We realize the growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy of single GaAs/GaAsP NWs demonstrates their high crystal quality and shows domination of the GaAs zinc-blende phase. Using continuous-wave and time-resolved photoluminescence (PL), we make a detailed comparison with uncapped GaAs NWs to emphasize the effect of the GaAsP capping in suppressing the nonradiative surface states. Significant PL enhancement in the core-shell structures exceeding 3 orders of magnitude at 10 K is observed; in uncapped NWs PL is quenched at 60 K, whereas single core-shell GaAs/GaAsP structures exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench.
引用
收藏
页码：5269 / 5274
页数：6
相关论文
共 50 条
  • [1] Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy
    Zhang, Yunyan
    Aagesen, Martin
    Holm, Jeppe V.
    Jorgensen, Henrik I.
    Wu, Jiang
    Liu, Huiyun
    [J]. NANO LETTERS, 2013, 13 (08) : 3897 - 3902
  • [2] Self-catalyzed growth of GaAs nanowires on silicon by HYPE
    Dong, Zhenning
    Andre, Yamina
    Dubrovskii, Vladimir
    Bougerol, Catherine
    Monier, Guillaume
    Ramdani, Reda
    Trassoudaine, Agnes
    Leroux, Christine
    Castelluci, Dominique
    Gil, Evelyne
    [J]. 2016 INTERNATIONAL CONFERENCE LASER OPTICS (LO), 2016,
  • [3] Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate
    Wu, Jiang
    Ramsay, Andrew
    Sanchez, Ana
    Zhang, Yunyan
    Kim, Dongyoung
    Brossard, Frederic
    Hu, Xian
    Benamara, Mourad
    Ware, Morgan E.
    Mazur, Yuriy I.
    Salamo, Gregory J.
    Aagesen, Martin
    Wang, Zhiming
    Liu, Huiyun
    [J]. NANO LETTERS, 2016, 16 (01) : 504 - 511
  • [4] Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon
    Alarcon-Llado, Esther
    Conesa-Boj, Sonia
    Wallart, Xavier
    Caroff, Philippe
    Fontcuberta i Morral, Anna
    [J]. NANOTECHNOLOGY, 2013, 24 (40)
  • [5] Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core-Shell Nanowires on Silicon
    Songmuang, R.
    Le Thuy Thanh Giang
    Bleuse, J.
    Den Hertog, M.
    Niquet, Y. M.
    Dang, Le Si
    Mariette, H.
    [J]. NANO LETTERS, 2016, 16 (06) : 3426 - 3433
  • [6] Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon
    Matteini, Federico
    Dubrovskii, Vladimir G.
    Rueffer, Daniel
    Tuetuencueoglu, Goezde
    Fontana, Yannik
    Morral, Anna Fontcuberta I.
    [J]. NANOTECHNOLOGY, 2015, 26 (10)
  • [7] Be- doping assessment in Self-Catalyzed MBE Grown GaAs Nanowires
    Ramaswamy, Priyanka
    Pokharel, Rabin
    Parakh, Mehul
    Jones, Keith
    Li, Jia
    Iyer, Shanthi
    [J]. 2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2021,
  • [8] Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy
    Dong, Zhenning
    Andre, Yamina
    Dubrovskii, Vladimir G.
    Bougerol, Catherine
    Leroux, Christine
    Ramdani, Mohammed R.
    Monier, Guillaume
    Trassoudaine, Agnes
    Castelluci, Dominique
    Gil, Evelyne
    [J]. NANOTECHNOLOGY, 2017, 28 (12)
  • [9] Phase Selection in Self-catalyzed GaAs Nanowires
    Panciera, Federico
    Baraissov, Zhaslan
    Patriarche, Gilles
    Dubrovskii, Vladimir G.
    Glas, Frank
    Travers, Laurent
    Mirsaidov, Utkur
    Harmand, Jean-Christophe
    [J]. NANO LETTERS, 2020, 20 (03) : 1669 - 1675
  • [10] Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy
    Piton, Marcelo R.
    Koivusalo, Eero
    Suomalainen, Soile
    Hakkarainen, Teemu
    Souto, S.
    Galeti, Helder V. A.
    Schramm, Andreas
    Gobato, Y. Galvao
    Guina, Mircea
    [J]. 2017 32ND SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO): CHIP ON THE SANDS, 2017,
12345