Effect of a GaAsP Shell on the Optical Properties of Self-Catalyzed GaAs Nanowires Grown on Silicon

被引：26
|
作者：
Couto, O. D. D., Jr. [1 ,4 ]
Sercombe, D. [1 ]
Puebla, J. [1 ]
Otubo, L. [2 ]
Luxmoore, I. J. [1 ]
Sich, M. [1 ]
Elliott, T. J. [1 ]
Chekhovich, E. A. [1 ]
Wilson, L. R. [1 ]
Skolnick, M. S. [1 ]
Liu, H. Y. [3 ]
Tartakovskii, A. I. [1 ]
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Inst Pesquisas Energet & Nucl IPEN, Sao Paulo, Brazil
[3] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
[4] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Sao Paulo, Brazil
来源：
NANO LETTERS | 2012年 / 12卷 / 10期
基金：
英国工程与自然科学研究理事会;
关键词：
Nanowire; GaAs/GaAsP; molecular beam epitaxy (MBE); emission enhancement; strain; room-temperature emission; EPITAXIAL-GROWTH; PASSIVATION; LAYER;
D O I：
10.1021/nl302490y
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We realize the growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy of single GaAs/GaAsP NWs demonstrates their high crystal quality and shows domination of the GaAs zinc-blende phase. Using continuous-wave and time-resolved photoluminescence (PL), we make a detailed comparison with uncapped GaAs NWs to emphasize the effect of the GaAsP capping in suppressing the nonradiative surface states. Significant PL enhancement in the core-shell structures exceeding 3 orders of magnitude at 10 K is observed; in uncapped NWs PL is quenched at 60 K, whereas single core-shell GaAs/GaAsP structures exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench.
引用
收藏
页码：5269 / 5274
页数：6
相关论文
共 50 条
  • [41] Interatomic potential for atomistic simulation of self-catalyzed GaAs nanowires growth
    Soares Oliveira, Douglas
    Alonso Cotta, Mônica
    Eduardo Padilha, José
    [J]. Soares Oliveira, Douglas (douglas.oliveira@ufpr.br), 1600, Elsevier B.V., Netherlands (183):
  • [42] Stabilization of the Morphology and Crystal Phase in Ensembles of Self-Catalyzed GaAs Nanowires
    Dubrovskii, Vladimir G.
    [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2019, 13 (10):
  • [43] Strain-driven synthesis of self-catalyzed branched GaAs nanowires
    Zha, Guowei
    Li, Mifeng
    Yu, Ying
    Wang, Lijuan
    Xu, Jianxing
    Shang, Xiangjun
    Ni, Haiqiao
    Niu, Zhichuan
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (16)
  • [44] Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate
    Yamaguchi, Masahito
    Paek, Ji-Hyun
    Amano, Hiroshi
    [J]. NANOSCALE RESEARCH LETTERS, 2012, 7
  • [45] Self-catalyzed core-shell GaAs/GaNAs nanowires grown on patterned Si (111) by gas-source molecular beam epitaxy
    La, Rui
    Liu, Ren
    Yao, Weichuan
    Chen, Renjie
    Jansson, Mattias
    Pan, Janet L.
    Buyanova, Irina A.
    Xiang, Jie
    Dayeh, Shadi A.
    Tu, Charles W.
    [J]. APPLIED PHYSICS LETTERS, 2017, 111 (07)
  • [46] Self-Catalyzed Ternary Core-Shell GaAsP Nanowire Arrays Grown on Patterned Si Substrates by Molecular Beam Epitaxy
    Zhang, Yunyan
    Wu, Jiang
    Aagesen, Martin
    Holm, Jeppe
    Hatch, Sabina
    Tang, Mingchu
    Huo, Suguo
    Liu, Huiyun
    [J]. NANO LETTERS, 2014, 14 (08) : 4542 - 4547
  • [47] Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate
    Masahito Yamaguchi
    Ji-Hyun Paek
    Hiroshi Amano
    [J]. Nanoscale Research Letters, 7
  • [48] Interatomic potential for atomistic simulation of self-catalyzed GaAs nanowires growth
    Oliveira, Douglas Soares
    Cotta, Monica Alonso
    Padilha, Jose Eduardo
    [J]. COMPUTATIONAL MATERIALS SCIENCE, 2020, 183
  • [49] Self-Catalyzed Growth Of GaAs Nanorods On Silicon Via MBE
    Misa, J. V. A.
    Porquez, J. G.
    Defensor, M. J.
    Jaculbia, R. B.
    Balgos, M. H. M.
    Somintac, A. S.
    Salvador, A. A.
    [J]. PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [50] Wafer-scale integration of GaAs/AlGaAs core-shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy
    Minehisa, Keisuke
    Murakami, Ryo
    Hashimoto, Hidetoshi
    Nakama, Kaito
    Sakaguchi, Kenta
    Tsutsumi, Rikuo
    Tanigawa, Takeru
    Yukimune, Mitsuki
    Nagashima, Kazuki
    Yanagida, Takeshi
    Sato, Shino
    Hiura, Satoshi
    Murayama, Akihiro
    Ishikawa, Fumitaro
    [J]. NANOSCALE ADVANCES, 2023, 5 (06): : 1651 - 1663
12345