A microwave plasma jet chemical vapor deposition for diamond film growth

被引：0
|
作者：
Lin, Chun-Yu [1 ]
Yen, Jing-Shyang [2 ]
Hsu, Hua-Yi [1 ]
Lin, Ming-Chieh [3 ]
机构：
[1] Natl Taipei Univ Technol, Dept Mech Engn, Taipei, Taiwan
[2] Natl Taipei Univ Technol, Dept Elect Engn, Taipei, Taiwan
[3] Hanyang Univ, Dept Elect & Biomed Engn, Seoul, South Korea
来源：
2019 INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC) | 2019年
关键词：
Diamond film; MPJCVD; Plasma;
D O I：
10.1109/ivec.2019.8744988
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The research and development of a microwave plasma jet chemical vapor deposition for diamond film growth have been carried out in this study. This three-dimensional microwave plasma model helps understanding the operating conditions for the growth of diamond film. This mathematical modeling uses an adaptive finite element numerical method based on different parameters. Plasma simulation has been considered as a numerically stiff problem because of the strong nonlinearity and multi scales crossing. The whole system has been modeled soundly. Also, the thin diamond film has been successfully fabricated according to the identical condition. The SEM image shows that the deposited diamond particles are uniformly distributed on the substrate with the size of 1 mu m which might find application in surface hardening and field electron emission.
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页数：2
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