Single hole transport in a silicon metal-oxide-semiconductor quantum dot

被引：23
|
作者：
Li, R. [1 ]
Hudson, F. E. [2 ,3 ]
Dzurak, A. S. [2 ,3 ]
Hamilton, A. R. [1 ]
机构：
[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
[2] Univ New S Wales, Australian Natl Fabricat Facil, Sydney, NSW 2052, Australia
[3] Univ New S Wales, Sch Elect Engn & Telecommun, Ctr Excellence Quantum Computat & Commun Technol, Sydney, NSW 2052, Australia
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 16期
基金：
澳大利亚研究理事会;
关键词：
ELECTRON-SPIN; TRANSISTOR;
D O I：
10.1063/1.4826183
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si complementary MOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and reservoirs. Clear Coulomb blockade oscillations are observed, and source-drain biasing measurements show that it is possible to deplete the dot down to the few hole regime, with excited states clearly visible. The architecture is sufficiently versatile that a second hole dot could be induced adjacent to the first one. (C) 2013 AIP Publishing LLC.
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页数：4
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