Single hole transport in a silicon metal-oxide-semiconductor quantum dot

被引：23

作者：

Li, R. ^{[1
]}

Hudson, F. E. ^{[2
,3
]}

Dzurak, A. S. ^{[2
,3
]}

Hamilton, A. R. ^{[1
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Univ New S Wales, Australian Natl Fabricat Facil, Sydney, NSW 2052, Australia

[3] Univ New S Wales, Sch Elect Engn & Telecommun, Ctr Excellence Quantum Computat & Commun Technol, Sydney, NSW 2052, Australia

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 16期

基金：

澳大利亚研究理事会;

关键词：

ELECTRON-SPIN; TRANSISTOR;

D O I：

10.1063/1.4826183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si complementary MOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and reservoirs. Clear Coulomb blockade oscillations are observed, and source-drain biasing measurements show that it is possible to deplete the dot down to the few hole regime, with excited states clearly visible. The architecture is sufficiently versatile that a second hole dot could be induced adjacent to the first one. (C) 2013 AIP Publishing LLC.

引用

页数：4

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