Piezoresistive pressure sensing by porous silicon membrane

被引：18

作者：

Pramanik, C ^{[1
]}

Saha, H ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Elect & Telecommun Engn, IC Design & Fabricat Ctr, Kolkata 700032, W Bengal, India

来源：

IEEE SENSORS JOURNAL | 2006年 / 6卷 / 02期

关键词：

piezoresistive pressure sensing; porous silicon membrane; quantum confinement;

D O I：

10.1109/JSEN.2006.870171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the piezoresistive pressure-sensing property of porous silicon has been reported. The pressure sensitivity of a porous silicon membrane of 63% porosity and 20-mu m thickness has been observed to be about three times more than that of a conventional bulk silicon membrane of the same dimensions. The increased sensitivity is attributed to the improvement in piezoresistance due to quantum confinement in the porous silicon nanostructure. The piezoresistive coefficient of porous silicon is estimated for the first time and is observed to be about 50% larger than that of monocrystalline silicon for a 63% porosity porous silicon membrane. The response time has also been studied and observed to be significantly shorter. Power dissipation of the porous silicon pressure sensor is also much less compared to that of commercial bulk silicon piezoresistive pressure sensors.

引用

页码：301 / 309

页数：9

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