Piezoresistive pressure sensing by porous silicon membrane

被引：18

作者：

Pramanik, C ^{[1
]}

Saha, H ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Elect & Telecommun Engn, IC Design & Fabricat Ctr, Kolkata 700032, W Bengal, India

来源：

IEEE SENSORS JOURNAL | 2006年 / 6卷 / 02期

关键词：

piezoresistive pressure sensing; porous silicon membrane; quantum confinement;

D O I：

10.1109/JSEN.2006.870171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the piezoresistive pressure-sensing property of porous silicon has been reported. The pressure sensitivity of a porous silicon membrane of 63% porosity and 20-mu m thickness has been observed to be about three times more than that of a conventional bulk silicon membrane of the same dimensions. The increased sensitivity is attributed to the improvement in piezoresistance due to quantum confinement in the porous silicon nanostructure. The piezoresistive coefficient of porous silicon is estimated for the first time and is observed to be about 50% larger than that of monocrystalline silicon for a 63% porosity porous silicon membrane. The response time has also been studied and observed to be significantly shorter. Power dissipation of the porous silicon pressure sensor is also much less compared to that of commercial bulk silicon piezoresistive pressure sensors.

引用

页码：301 / 309

页数：9

共 50 条

[21] Enhancement of the sensitivity of pressure sensors with a composite Si/porous silicon membrane
Sujatha, L.
Bhattacharya, Enakshi
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2007, 17 (08) : 1605 - 1610
[22] Rapid Microwave Polymerization of Porous Nanocomposites with Piezoresistive Sensing Function
Herren, Blake
Charara, Mohammad
Saha, Mrinal C.
Altan, M. Cengiz
Liu, Yingtao
NANOMATERIALS, 2020, 10 (02)
[23] Analysis and validation of sensing sensitivity of a piezoresistive pressure sensor
Lin, CT
Peng, CT
Lin, JC
Chiang, KN
ADVANCES IN ELECTRONIC PACKAGING 2003, VOL 1, 2003, : 225 - 231
[24] Contactless Position Sensing using Piezoresistive Pressure SENSOR
Kavya, M. C.
Guhilot, Hansraj
2013 INTERNATIONAL CONFERENCE ON COMMUNICATIONS AND SIGNAL PROCESSING (ICCSP), 2013, : 602 - 606
[25] Piezoresistive accelerometer fabricated by selective formation and etching of porous silicon
Sim, JH
Cho, CS
Kim, JS
Lee, JH
Lee, JH
SENSORS AND MATERIALS, 1999, 11 (08) : 479 - 492
[26] Fabrication and properties of piezoresistive cantilever beam with porous silicon element
Domanski, K
Grabiec, P
Marczewski, J
Gotszalk, T
Ivanov, T
Abedinov, N
Rangelow, IW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01): : 48 - 52
[27] Temperature effects Modeling in silicon piezoresistive pressure sensor
Aljancic, U
Resnik, D
Vrtacnik, D
Mozek, M
Amon, S
11TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE, PROCEEDINGS, 2002, : 36 - 40
[28] SILICON CAPACITIVE PRESSURE SENSORS VIE WITH PIEZORESISTIVE SENSORS
MORRIS, HM
CONTROL ENGINEERING, 1986, 33 (09) : 129 - 129
[29] A comparative study of Polarimetric sensing with freestanding n-type porous silicon and porous alumina membrane
Kumar, Neeraj
Kumar, Tushar
Kumar, Deepak
Shariq, Mohammad
Alathlawi, Hussain J.
El-Bialy, E.
Ahmed, Inas A.
Alhazmi, Noura E.
Almutib, Eman
Khan, Mohd Shakir
MATERIALS CHEMISTRY AND PHYSICS, 2023, 301
[30] Optimum design considerations for silicon piezoresistive pressure sensors
Kanda, Y
Yasukawa, A
SENSORS AND ACTUATORS A-PHYSICAL, 1997, 62 (1-3) : 539 - 542

← 1 2 3 4 5 →