Piezoresistive pressure sensing by porous silicon membrane

被引：18
|
作者：
Pramanik, C [1 ]
Saha, H [1 ]
机构：
[1] Jadavpur Univ, Dept Elect & Telecommun Engn, IC Design & Fabricat Ctr, Kolkata 700032, W Bengal, India
来源：
IEEE SENSORS JOURNAL | 2006年 / 6卷 / 02期
关键词：
piezoresistive pressure sensing; porous silicon membrane; quantum confinement;
D O I：
10.1109/JSEN.2006.870171
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the piezoresistive pressure-sensing property of porous silicon has been reported. The pressure sensitivity of a porous silicon membrane of 63% porosity and 20-mu m thickness has been observed to be about three times more than that of a conventional bulk silicon membrane of the same dimensions. The increased sensitivity is attributed to the improvement in piezoresistance due to quantum confinement in the porous silicon nanostructure. The piezoresistive coefficient of porous silicon is estimated for the first time and is observed to be about 50% larger than that of monocrystalline silicon for a 63% porosity porous silicon membrane. The response time has also been studied and observed to be significantly shorter. Power dissipation of the porous silicon pressure sensor is also much less compared to that of commercial bulk silicon piezoresistive pressure sensors.
引用
收藏
页码：301 / 309
页数：9
相关论文
共 50 条
  • [1] Porous silicon as pressure sensing material
    Gangopadhyay, U
    Pramanik, C
    Saha, H
    Kim, K
    Yi, J
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 : S450 - S453
  • [2] Porous silicon membrane for humidity sensing applications
    O'Halloran, GM
    Groeneweg, J
    Sarro, PM
    French, PJ
    EUROSENSORS XII, VOLS 1 AND 2, 1998, : 901 - 904
  • [3] A silicon piezoresistive pressure sensor
    Singh, R
    Ngo, LL
    Seng, HS
    Mok, FNC
    FIRST IEEE INTERNATION WORKSHOP ON ELECTRONIC DESIGN, TEST AND APPLICATIONS, PROCEEDINGS, 2002, : 181 - 184
  • [4] Silicon piezoresistive cantilever beam with porous silicon element
    Domanski, K
    Tomaszewski, D
    Grabiec, P
    Gniazdowski, Z
    Kudla, A
    Beck, RB
    Jakubowski, A
    Gotszalk, T
    Rangelow, IW
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 523 - 526
  • [5] Effect of the membrane flatness defect on the offset voltage of a silicon piezoresistive pressure sensor
    Dibi, Z
    Boukabache, A
    Pons, A
    ICECS 2003: PROCEEDINGS OF THE 2003 10TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3, 2003, : 902 - 905
  • [6] Silicon/Porous Silicon composite membrane for high sensitivity pressure sensor
    Sujatha, L.
    Bhattacharya, Enakshi
    MEMS/MOEMS COMPONENTS AND THEIR APPLICATIONS IV, 2007, 6464
  • [7] A PIEZORESISTIVE INTEGRATED SILICON PRESSURE TRANSDUCER
    FRANTZIS, N
    ISA TRANSACTIONS, 1965, 4 (04) : 344 - &
  • [8] Optimization of design parameters for bulk micromachined silicon membranes for piezoresistive pressure sensing application
    Belwanshi, Vinod
    Topkar, Anita
    DAE SOLID STATE PHYSICS SYMPOSIUM 2015, 2016, 1731
  • [9] PIEZORESISTIVE PRESSURE SENSOR WITH SILICON DIAPHRAGM
    BREIMESSER, F
    POPPINGER, M
    SCHWAIER, A
    SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS, 1981, 10 (02): : 72 - 77
  • [10] Design of air blast pressure sensors based on miniature silicon membrane and piezoresistive gauges
    Riondet, J.
    Coustou, A.
    Aubert, H.
    Pons, P.
    Lavayssiere, M.
    Luc, J.
    Lefrancois, A.
    28TH MICROMECHANICS AND MICROSYSTEMS EUROPE WORKSHOP, 2017, 922
12345