GaN nanowire light emitting diodes based on templated and scalable nanowire growth process

被引：83

作者：

Hersee, S. D. ^{[1
]}

Fairchild, M. ^{[1
]}

Rishinaramangalam, A. K. ^{[1
]}

Ferdous, M. S. ^{[1
]}

Zhang, L.

Varangis, P. M.

Swartzentruber, B. S. ^{[2
,3
]}

Talin, A. A. ^{[2
,3
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87131 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Ctr Integrated Nanotechnol, Albuquerque, NM USA

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 01期

关键词：

D O I：

10.1049/el:20092391

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN optoelectronic devices based on nanowires offer potential advantages that merit further investigation for applications in solid-state lighting and displays. Reported is the operation GaN nanowire, light-emitting diodes that are based on a uniform and scalable nanowire process. For light-emitting diodes consisting of approximately 300 nanowire pn homojunctions, operating in parallel, the electroluminescence intensity was found to grow superlinearly with current. For individual nanowire light-emitting diodes the forward and reverse leakage current was < 1 pA. The low leakage current of individual light-emitting nanowire diodes indicates that surface effects do not dominate the electrical behaviour of these LEDs.

引用

页码：75 / U24

页数：2

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