Fabrication of ZnO nanowire-based diodes and their light-emitting properties

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Key Laboratory for Physics and Chemistry of Nanodevices, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China [1 ]
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Wuli Xuebao | 2008年 / 2卷 / 1141-1144期
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摘要：
A Schottky type light-emitting diode of ZnO nanowire was fabricated based on the principle of luminescence of Schottky barrier heterojunction. Driven by a voltage of above 6 V, an EL spectrum was obtained. The spectrum consisted of two peaks: one is centered at a wavelength of the ultraviolet 392 nm, and the other at the visible 525 nm. The mechanism of electroluminescence of this device was analyzed according to the rectifying I-V curve and the energy band structure.
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