Fabrication of ZnO nanowire-based diodes and their light-emitting properties

A Schottky type light-emitting diode of ZnO nanowire was fabricated based on the principle of luminescence of Schottky barrier heterojunction. Driven by a voltage of above 6 V, an EL spectrum was obtained. The spectrum consisted of two peaks: one is centered at a wavelength of the ultraviolet 392 nm, and the other at the visible 525 nm. The mechanism of electroluminescence of this device was analyzed according to the rectifying I-V curve and the energy band structure.