Structure and Crystallization Study of Phase Change Thin Ge-Sb-Te Films

被引：0
|
作者：
Kumar, Sandeep [1 ]
Singh, Digvijay [1 ]
Sandhu, Sharanjit [1 ]
Thangaraj, R. [1 ]
机构：
[1] Guru Nanak Dev Univ, Semicond Lab, Dept Phys, Amritsar 143005, Punjab, India
来源：
INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE & TECHNOLOGY | 2012年 / 1451卷
关键词：
chalcogenide; thin film; phase transitions; crystallization;
D O I：
10.1063/1.4732404
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The crystallization kinetics of thermally deposited Ge2Sb2Te5 (GST) films has been investigated using temperature-dependent sheet resistance (R-s) measurements in combination with structural investigations employing x-ray diffraction (XRD). By Kissinger plot, the activation energy for crystallization is determined to be 1.87eV. The sheet resistance of the GST samples decreases from 0.7M Omega/square to 153 Omega/square upon annealing above the phase transition temperature and the crystallization temperature (TC) was found to increase with heating rate (beta).
引用
收藏
页码：172 / 173
页数：2
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