Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °C)

被引：0
|
作者：
Kuwahata, Ryota [1 ]
Jiang, Haisong [1 ]
Hamamoto, Kiichi [1 ]
机构：
[1] Kyushu Univ, I EggS, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan
来源：
2019 24TH MICROOPTICS CONFERENCE (MOC) | 2019年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the saturation output power of 1.3-mu m wavelength quantum dot semiconductor optical amplifier (QD-SOA) under high temperature by using Fably-Perot laser diode structure. The saturation output power of 5 dBm has been confirmed under 85 degrees C with a single stripe device (375 mu m length).
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页码：180 / 181
页数：2
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