Raman spectroscopy characterization of two-dimensional materials

被引：47
|
作者：
Liang, Fang [1 ]
Xu, Hejun [1 ]
Wu, Xing [1 ]
Wang, Chaolun [1 ]
Luo, Chen [1 ]
Zhang, Jian [1 ]
机构：
[1] East China Normal Univ, Dept Elect Engn, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R China
来源：
CHINESE PHYSICS B | 2018年 / 27卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Raman; 2D materials; non-destructive characterization; TRANSITION-METAL DICHALCOGENIDES; TEMPERATURE-DEPENDENT RAMAN; CHARGE-DENSITY-WAVE; FEW-LAYER MOS2; THERMAL-CONDUCTIVITY; BAND-GAP; INPLANE HETEROSTRUCTURES; LATERAL HETEROJUNCTIONS; ELECTRONIC-PROPERTIES; LATTICE-DYNAMICS;
D O I：
10.1088/1674-1056/27/3/037802
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Two-dimensional (2D) materials have become a hot study topic in recent years due to their outstanding electronic, optical, and thermal properties. The unique band structures of strong in-plane chemical bonds and weak out-of-plane van der Waals (vdW) interactions make 2D materials promising for nanodevices and various other applications. Raman spectroscopy is a powerful and non-destructive characterization tool to study the properties of 2D materials. In this work, we review the research on the characterization of 2D materials with Raman spectroscopy. In addition, we discuss the application of the Raman spectroscopy technique to semiconductors, superconductivity, photoelectricity, and thermoelectricity.
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页数：14
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