MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers

被引：5

作者：

Tuna, Oe. ^{[1
,2
]}

Hahn, H. ^{[2
]}

Kalisch, H. ^{[1
]}

Giesen, C. ^{[1
]}

Vescan, A. ^{[1
]}

Rzheutski, M. V. ^{[3
]}

Pavlovskii, V. N. ^{[3
]}

Lutsenko, E. V. ^{[3
]}

Yablonskii, G. P. ^{[3
]}

Heuken, M. ^{[1
,2
]}

机构：

[1] AIXTRON SE, D-52134 Herzogenrath, Germany

[2] Rhein Westfal TH Aachen, GaN Device Technol, D-52074 Aachen, Germany

[3] Natl Acad Sci Belarus, BI Stepanov Phys Inst, Minsk 220072, BELARUS

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 370卷

关键词：

MOCVD; Nitrides; Semiconducting ternary compounds; III-V semiconductors; GAN;

D O I：

10.1016/j.jcrysgro.2012.09.055

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A series of Mg-doped thick InGaN layers with different Cp2Mg flows were grown on n-type GaN layers. The Mg doping effect on optical and electrical properties of InGaN:Mg was investigated through capacitance-voltage (C-V) measurements and temperature-resolved photoluminescence (PL). After annealing, p-type conductivity with acceptor concentrations about 3.5 x 10(18) cm(-3) and 9.5 x 10(17) cm(-3) were observed for the samples doped with little Cp2Mg. With the highest Cp2Mg flow, an inversion from p-type to n-type was observed by analysis of a Mott-Schottky (M-S) plot. The inversion of conductivity type was accompanied by a disappearance of InGaN band-to-band PL emission. It should be noted that annealing led to a substantial reduction of this band intensity. Thus, too high Mg doping is found to cause a strong compensation of p-type conductivity by nonradiative defects of n-type as it is seen from C-V and PL measurements. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：2 / 6

页数：5

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