MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers

被引：5
|
作者：
Tuna, Oe. [1 ,2 ]
Hahn, H. [2 ]
Kalisch, H. [1 ]
Giesen, C. [1 ]
Vescan, A. [1 ]
Rzheutski, M. V. [3 ]
Pavlovskii, V. N. [3 ]
Lutsenko, E. V. [3 ]
Yablonskii, G. P. [3 ]
Heuken, M. [1 ,2 ]
机构：
[1] AIXTRON SE, D-52134 Herzogenrath, Germany
[2] Rhein Westfal TH Aachen, GaN Device Technol, D-52074 Aachen, Germany
[3] Natl Acad Sci Belarus, BI Stepanov Phys Inst, Minsk 220072, BELARUS
来源：
JOURNAL OF CRYSTAL GROWTH | 2013年 / 370卷
关键词：
MOCVD; Nitrides; Semiconducting ternary compounds; III-V semiconductors; GAN;
D O I：
10.1016/j.jcrysgro.2012.09.055
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A series of Mg-doped thick InGaN layers with different Cp2Mg flows were grown on n-type GaN layers. The Mg doping effect on optical and electrical properties of InGaN:Mg was investigated through capacitance-voltage (C-V) measurements and temperature-resolved photoluminescence (PL). After annealing, p-type conductivity with acceptor concentrations about 3.5 x 10(18) cm(-3) and 9.5 x 10(17) cm(-3) were observed for the samples doped with little Cp2Mg. With the highest Cp2Mg flow, an inversion from p-type to n-type was observed by analysis of a Mott-Schottky (M-S) plot. The inversion of conductivity type was accompanied by a disappearance of InGaN band-to-band PL emission. It should be noted that annealing led to a substantial reduction of this band intensity. Thus, too high Mg doping is found to cause a strong compensation of p-type conductivity by nonradiative defects of n-type as it is seen from C-V and PL measurements. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：2 / 6
页数：5
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