High hole concentrations in Mg-doped InGaN grown by MOVPE

被引：55
|
作者：
Kumakura, K [1 ]
Makimoto, T [1 ]
Kobayashi, N [1 ]
机构：
[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷
关键词：
Mg-doped InGaN; hole concentration; MOVPE; p-type conductivity;
D O I：
10.1016/S0022-0248(00)00697-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We investigated the electrical properties of Me-doped InxGa1-xN (0 less than or equal to x < 0.75) grown by metalorganic vapor-phase epitaxy with various growth conditions, such as Mg-doping concentration, growth-rate and growth temperature. The hole concentration depends on the growth-rate, the In mole fraction and the crystal quality of the InGaN layers. The hole concentration of Mg-doped InxGa1-xN layers below x = 0.15 increased with the In mole fraction, while those above x = 0.15 decreased. We realized the p-type InGaN with the room-temperature hole concentration above 10(18)cm(-3) and obtained the maximum hole concentration of 7.8 x 10(18) cm (-3) for x = 0.2 by optimizing the growth conditions. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：267 / 270
页数：4
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