The Real Role of 4,4′-Bis[N-[4-{N,N-bis(3-methylphenyl)amino}phenyl]-N-phenylamino]biphenyl (DNTPD) Hole Injection Layer in OLED: Hole Retardation and Carrier Balancing

被引：4
|
作者：
Oh, Hyoung-Yun [1 ]
Yoo, Insun [2 ]
Lee, Young Mi [3 ]
Kim, Jeong Won [3 ]
Yi, Yeonjin [3 ]
Lee, Seonghoon [1 ]
机构：
[1] Seoul Natl Univ, Sch Chem, Seoul 151747, South Korea
[2] LG Display R&D Ctr, Paju Si 413811, Gyeonggi Do, South Korea
[3] Korea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South Korea
来源：
BULLETIN OF THE KOREAN CHEMICAL SOCIETY | 2014年 / 35卷 / 03期
关键词：
OLED; DNTPD; NPB; UPS; Injection barrier; ORGANIC ELECTROLUMINESCENT DEVICES; INTERFACES; EFFICIENCY; MOLECULES; ALIGNMENT; ENERGY; DIODES; METAL;
D O I：
10.5012/bkcs.2014.35.3.929
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.
引用
收藏
页码：929 / 932
页数：4
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