The Real Role of 4,4′-Bis[N-[4-{N,N-bis(3-methylphenyl)amino}phenyl]-N-phenylamino]biphenyl (DNTPD) Hole Injection Layer in OLED: Hole Retardation and Carrier Balancing

被引：4

作者：

Oh, Hyoung-Yun ^{[1
]}

Yoo, Insun ^{[2
]}

Lee, Young Mi ^{[3
]}

Kim, Jeong Won ^{[3
]}

Yi, Yeonjin ^{[3
]}

Lee, Seonghoon ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem, Seoul 151747, South Korea

[2] LG Display R&D Ctr, Paju Si 413811, Gyeonggi Do, South Korea

[3] Korea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South Korea

来源：

BULLETIN OF THE KOREAN CHEMICAL SOCIETY | 2014年 / 35卷 / 03期

关键词：

OLED; DNTPD; NPB; UPS; Injection barrier; ORGANIC ELECTROLUMINESCENT DEVICES; INTERFACES; EFFICIENCY; MOLECULES; ALIGNMENT; ENERGY; DIODES; METAL;

D O I：

10.5012/bkcs.2014.35.3.929

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

引用

页码：929 / 932

页数：4

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