Characterization of chemically amplified resist for X-ray lithography by Fourier transform infrared spectroscopy

被引：14

作者：

Tan, TL ^{[1
]}

Wong, D ^{[1
]}

Lee, P ^{[1
]}

Rawat, RS ^{[1
]}

Springham, S ^{[1
]}

Patran, A ^{[1
]}

机构：

[1] Nanyang Technol Univ, Natl Inst Educ, Singapore 637616, Singapore

来源：

THIN SOLID FILMS | 2006年 / 504卷 / 1-2期

关键词：

chemically amplified resist SU-8;

D O I：

10.1016/j.tsf.2005.09.151

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SU-8 resist was characterized for X-ray lithography from a plasma focus source by studying its cross-linking process using Fourier transform infrared (FT-IR) spectroscopy. The cross-linking process of the resist during post-exposure bake (PEB) was accurately monitored using the infrared absorption peaks at 862, 914, and 1128 cm(-1). Results showed that the cross-linking of SU-8 was effectively completed at the exposure dose of 2500 mJ/cm(2) for resist thickness of 25 mu m. Reliable processing conditions consisted of an intermediate PEB at 65 degrees C for 5 min, with the PEB temperature ramped up to 95 degrees C over 1.5 min and then followed by a final PEB at 95 degrees C for 5 min. Test structures with aspect ratio 20:1 were obtained. (c) 2005 Elsevier B.V. All rights reserved.

引用

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页码：113 / 116

页数：4

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