Modeling of program Vth distribution for 3-D TLC NAND flash memory

被引：15
|
作者：
Wang, Kunliang [1 ]
Du, Gang [1 ]
Lun, Zhiyuan [2 ]
Chen, Wangyong [1 ]
Liu, Xiaoyan [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Huawei Technol Co Ltd, Hangzhou, Zhejiang, Peoples R China
来源：
SCIENCE CHINA-INFORMATION SCIENCES | 2019年 / 62卷 / 04期
基金：
中国国家自然科学基金;
关键词：
modeling and simulation; measurement; reliability; program Vth distribution; charge-trapping memory; 3-D vertical channel TLC; QLC NAND flash memory; LIFETIME;
D O I：
10.1007/s11432-018-9490-1
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory. The program Vth distribution can be calculated by considering ISPP noise, WL-WL interference, and the RTN effect of tunneling oxide and poly Si, which are the major physical factors affecting the width of program Vth distribution. Then, the program Vth distribution shapes with different ISPP incremental voltage steps are compared, and the results are found to be consistent with the experimental results. Code and layer-dependent coupling coefficients of WL-WL interference in 3-D vertical channel NAND flash memory are considered. The effect of RTN on the program Vth distribution is comprehensively studied. The program Vth distribution of a WL is calibrated with the measurement, and a good agreement is obtained, validating the array program Vth distribution simulation method. The simulation method can help in improving the reliability of 3-D TLC NAND flash memory and provides guidance for the design and optimization of 3-D QLC NAND flash memory technology.
引用
下载
收藏
页数：10
相关论文
共 50 条
  • [41] Modeling and Optimization of Array Leakage in 3D NAND Flash Memory
    Song, Yu-jie
    Xia, Zhi-liang
    Hua, Wen-yu
    Liu, Fan-dong
    Huo, Zong-liang
    PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS (ICTA 2018), 2018, : 120 - 121
  • [42] Atomistic Study of lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash memory
    Wu, Jixuan
    Chen, Jiezhi
    Jiang, Xiangwei
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) : 626 - 631
  • [43] Self-Heating Effects in 3-D Vertical-NAND (V-NAND) Flash Memory
    Yun, Gyeong-Jun
    Yun, Dae-Hwan
    Park, Jun-Young
    Kim, Seong-Yeon
    Choi, Yang-Kyu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (12) : 5505 - 5510
  • [44] Investigation of Endurance Characteristics in 3-D nand Flash Memory With Trap Profile Analysis
    Jo, Hyungjun
    Kim, Jongwoo
    Cho, Yonggyu
    Shim, Hyunyoung
    Sim, Jaesung
    Shin, Hyungcheol
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) : 1852 - 1857
  • [45] Impact of Self-Heating Effect on the Retention of 3-D NAND Flash Memory
    Wang, Kunliang
    Lun, Zhiyuan
    Chen, Wangyong
    Liu, Xiaoyan
    Du, Gang
    2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2017,
  • [46] Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory
    Zhang, Meng
    Wu, Fei
    Yu, Qin
    Liu, Weihua
    Wang, Yifan
    Xie, Changsheng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (12) : 5490 - 5496
  • [47] Exploiting Metadata to Estimate Read Reference Voltage for 3-D nand Flash Memory
    Li, Yingge
    Han, Guojun
    Huang, Sanwei
    Liu, Chang
    Zhang, Meng
    Wu, Fei
    IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 2023, 69 (01) : 9 - 17
  • [48] Temperature-induced Instability of Retention Characteristics in 3-D NAND Flash Memory
    An, Ukju
    Yoon, Gilsang
    Go, Donghyun
    Park, Jounghun
    Kim, Donghwi
    Kim, Jongwoo
    Lee, Jeong-Soo
    2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM, 2023,
  • [49] Experimental Verification and Analysis of the Acceleration Factor Model for 3-D NAND Flash Memory
    Wei, Debao
    Feng, Hua
    Qiao, Liyan
    Hu, Cong
    Peng, Xiyuan
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 41 (10) : 3543 - 3547
  • [50] Research on 3D TLC NAND flash reliability from the perspective of threshold voltage distribution
    Wei, Debao
    Feng, Hua
    Chen, Xiaoyu
    Qiao, Liyan
    Peng, Xiyuan
    MICROELECTRONICS RELIABILITY, 2020, 114 (114)
12345