Hole-type superconducting gatemon qubit based on Ge/Si core/shell nanowires

被引:9
|
作者
Zhuo, Enna [1 ,2 ]
Lyu, Zhaozheng [1 ,3 ]
Sun, Xiaopei [1 ,2 ]
Li, Ang [4 ]
Li, Bing [1 ,2 ]
Ji, Zhongqing [1 ]
Fan, Jie [1 ]
Bakkers, E. P. A. M. [5 ]
Han, Xiaodong [4 ]
Song, Xiaohui [1 ,2 ,6 ]
Qu, Fanming [1 ,2 ,3 ,6 ]
Liu, Guangtong [1 ,2 ,3 ,6 ]
Shen, Jie [1 ,2 ,6 ]
Lu, Li [1 ,2 ,3 ,6 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
[3] Hefei Natl Lab, Hefei 230088, Peoples R China
[4] Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
[5] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[6] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
QUANTUM; COHERENCE;
D O I
10.1038/s41534-023-00721-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We demonstrate that superconducting gatemon qubits based on superconductor-semiconductor-superconductor Josephson junctions can be constructed on hole-type Ge/Si core/shell nanowires. The frequency of the qubit can be set firstly by controlling the diffusion of Al in the nanowire via thermal annealing, which yields a suitable critical supercurrent allowing the qubit frequency to be within the experimentally accessible range, and then by fine tuning of a gate voltage, by which an accurate adjustment of the frequency can be realized. On the resulted qubit, Rabi oscillation with an energy relaxation time T-1 similar to 180 ns was observed in the time domain, an average decoherence time T'(2) similar to 15 ns was obtained, and the gate voltage dependence of both T-1 and T'(2) was investigated. Such a hole-type superconducting gatemon qubit, based on materials with strong spin-orbit coupling and potentially the absence of hyperfine interaction after isotope purification, could be used for exploring the quantum coherence phenomena of hole-gas and even Majorana physics in Ge-based quantum devices.
引用
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页数:7
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