Quantitative Modeling of Near-Field Interactions in Terahertz Near-Field Microscopy

被引:3
|
作者
Peng, Zhaomin [1 ,2 ]
Zhang, Dehai [1 ]
Ge, Shuqi [1 ,2 ]
Meng, Jin [1 ]
机构
[1] Chinese Acad Sci, Natl Space Sci Ctr, Key Lab Microwave Remote Sensing, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
来源
APPLIED SCIENCES-BASEL | 2023年 / 13卷 / 06期
关键词
terahertz technology; scattering-scanning near-field optical microscopy; finite element model; near-field interactions; edge effect; antenna effect; SCATTERING; NANOSCOPY;
D O I
10.3390/app13063400
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Terahertz scattering-scanning near-field optical microscopy (THz s-SNOM), combining the best features of terahertz technology and s-SNOM technology, has shown unique advantages in various applications. Consequently, building a model to characterize near-field interactions and investigate practical issues has become a popular topic in THz s-SNOM research. In this study, a finite element model (FEM) is proposed to quantify the near-field interactions, and to investigate the edge effect and antenna effect in THz s-SNOM. Our results indicate that the proposed model can give us a better understanding of the near-field interactions and direct the parameter design of the probe for THz s-SNOM.
引用
收藏
页数:13
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