RECOMBINATION AND TRAPPING OF EXCESS CARRIERS IN n-InSb

被引：1
|
作者：
Tetyorkin, V. V. [1 ]
Tkachuk, A. I. [2 ]
Lutsyshyn, I. G. [1 ]
机构：
[1] Nat Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine
[2] Volodymyr Vynnychenko Cent Ukrainian State Univ, 1 Shevchenka Str, UA-25006 Kropyvnytskyi, Ukraine
来源：
UKRAINIAN JOURNAL OF PHYSICS | 2024年 / 69卷 / 01期
关键词：
InSb; lifetime; recombination and trapping effects; infrared photodiodes; ELECTRICAL-PROPERTIES; P-N; LIFETIME; HGCDTE;
D O I：
10.15407/ujpe69.1.45
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effect of trapping on the transient and steady-state lifetimes of excess carriers is investigated in InSb of n -type conductivity. Photoconductive decay and direct current measurements are used to characterize the starting material and infrared photodiodes. The large difference between the transient and steady-state lifetimes is explained by the trapping of minority carriers at the acceptor centers within the two -level recombination model. The recombination parameters of the traps are estimated.
引用
收藏
页码：45 / 52
页数：8
相关论文
共 50 条
  • [41] ON MODES OF ACOUSTOELECTRIC GAIN IN N-INSB
    GORELIK, J
    FISHER, B
    PRATT, B
    LUZ, Z
    PHYSICS LETTERS A, 1969, A 28 (07) : 485 - &
  • [42] DISPERSION OF N-INSB IN SUBMILLIMETER REGION
    LISTVIN, VN
    POTAPOV, VT
    SOKOLOVSKII, AA
    STRAKHOV, VA
    TREGUB, DP
    FIZIKA TVERDOGO TELA, 1975, 17 (06): : 1580 - 1583
  • [43] ON THE DEEP IMPURITY LEVEL IN N-INSB
    LITWINSTASZEWSKA, E
    KONCZEWICZ, L
    PIOTRZKOWSKI, R
    SZYMANSKA, W
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 114 (02): : K153 - K156
  • [44] RECOMBINATION AND TRAPPING OF CARRIERS IN GERMANIUM
    FAN, HY
    NAVON, D
    GEBBIE, H
    PHYSICA, 1954, 20 (10): : 855 - 872
  • [45] On the charge transport mechanism in n-InSb films
    Nikol'skii, YA
    SEMICONDUCTORS, 2001, 35 (11) : 1252 - 1253
  • [46] ELECTRON SCATTERING AND TRANSPORT PHENOMENA IN N-INSB
    ZAWADZKI, W
    SZYMANSKA, W
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1151 - +
  • [47] RECOMBINATION OF EXCESS CARRIERS IN SEMICONDUCTORS
    OKADA, JI
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (12) : 1338 - 1344
  • [48] n-InSb的纵向磁阻振荡
    傅柔励
    郑国珍
    汤定元
    半导体学报, 1983, (03) : 230 - 238
  • [49] ACOUSTOELECTRIC ENERGY-CONVERSION IN N-INSB
    AOKI, T
    OGAWA, F
    NAITO, I
    ARIZUMI, T
    APPLIED PHYSICS LETTERS, 1973, 22 (10) : 473 - 475
  • [50] SPATIAL DEPENDENCE OF IMPACT IONIZATION IN N-INSB
    TOSIMA, S
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (04) : 1025 - &
12345