RECOMBINATION AND TRAPPING OF EXCESS CARRIERS IN n-InSb

被引：1

作者：

Tetyorkin, V. V. ^{[1
]}

Tkachuk, A. I. ^{[2
]}

Lutsyshyn, I. G. ^{[1
]}

机构：

[1] Nat Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine

[2] Volodymyr Vynnychenko Cent Ukrainian State Univ, 1 Shevchenka Str, UA-25006 Kropyvnytskyi, Ukraine

来源：

UKRAINIAN JOURNAL OF PHYSICS | 2024年 / 69卷 / 01期

关键词：

InSb; lifetime; recombination and trapping effects; infrared photodiodes; ELECTRICAL-PROPERTIES; P-N; LIFETIME; HGCDTE;

D O I：

10.15407/ujpe69.1.45

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of trapping on the transient and steady-state lifetimes of excess carriers is investigated in InSb of n -type conductivity. Photoconductive decay and direct current measurements are used to characterize the starting material and infrared photodiodes. The large difference between the transient and steady-state lifetimes is explained by the trapping of minority carriers at the acceptor centers within the two -level recombination model. The recombination parameters of the traps are estimated.

引用

页码：45 / 52

页数：8

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