RECOMBINATION AND TRAPPING OF EXCESS CARRIERS IN n-InSb

被引：1
|
作者：
Tetyorkin, V. V. [1 ]
Tkachuk, A. I. [2 ]
Lutsyshyn, I. G. [1 ]
机构：
[1] Nat Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine
[2] Volodymyr Vynnychenko Cent Ukrainian State Univ, 1 Shevchenka Str, UA-25006 Kropyvnytskyi, Ukraine
来源：
UKRAINIAN JOURNAL OF PHYSICS | 2024年 / 69卷 / 01期
关键词：
InSb; lifetime; recombination and trapping effects; infrared photodiodes; ELECTRICAL-PROPERTIES; P-N; LIFETIME; HGCDTE;
D O I：
10.15407/ujpe69.1.45
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effect of trapping on the transient and steady-state lifetimes of excess carriers is investigated in InSb of n -type conductivity. Photoconductive decay and direct current measurements are used to characterize the starting material and infrared photodiodes. The large difference between the transient and steady-state lifetimes is explained by the trapping of minority carriers at the acceptor centers within the two -level recombination model. The recombination parameters of the traps are estimated.
引用
收藏
页码：45 / 52
页数：8
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