Write-error-rate of Spin-Transfer-Torque MRAM (Invited)

被引：1
|
作者：
Worledge, Daniel C. [1 ]
机构：
[1] IBM Res, IBM Almaden Res Ctr, San Jose, CA 95120 USA
来源：
2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS | 2023年
关键词：
MRAM; spin-transfer torque; STT-MRAM; writeerror-rate; PERPENDICULAR-ANISOTROPY;
D O I：
10.1109/IRPS48203.2023.10117666
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Embedded Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) is now a standard foundry offering for embedded non-volatile memory applications at the 28 nm node and below, where it replaces embedded Flash, due to lower development costs. The switch from in-plane to perpendicularly magnetized magnetic materials enabled reliable operation and a scaling path. Write-error-rate is the key reliability challenge for STT-MRAM. While due to fundamental physics, write-error-rate of STT-MRAM can be engineered to meet even aggressive product specifications.
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页数：4
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